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| SMG3400 Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description * The SMG3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. * The SMG3400 is universally used for all commercial-industrial applications. S 2 L 3 Top View B 1 B C D D G C J K Drain Gate Source G H J K L S D Features * Lower Gate Charge * Small Package Outline * RoHS Compliant H All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings 30 12 5.8 4.9 30 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG3400 Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 0.7 - Typ. 15 9.7 1.6 3.1 3.3 4.8 26.3 4.1 823 99 77 1.2 Max. 1.4 100 1 5 28 33 52 12 1030 3.6 Unit V V S nA uA uA Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= 12V VDS=24V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5.8A Static Drain-Source On-Resistance RDS(ON) - m VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A ID=5.8A VDS=15V VGS=4.5V VDS=15V VGS=10V RG=3 RL=2.7 VGS=0V VDS=15V f=1.0MHz f=1.0MHz Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD 2 - nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Min. - Typ. 16 8.9 - Max. 1.0 2.5 Unit V ns nC A Test Conditions IS=1.0A, VGS=0V IS=5A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=1.0V Reverse Recovery Time Trr Qrr IS Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG3400 Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG3400 Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Transfer Characteristics Fig 10. Single Pulse Power Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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